Triode CNT-FED structure gate runner and cathode manufactured method

ABSTRACT

The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

FIELD OF TECHNOLOGY

The present inventions relate to a structure of coplanar gate-cathode oftriode CNT-FED and the manufacturing method thereof and moreparticularly to a method of making triode CNT-FED by Nano-ImprintLithography and ink jet.

BACKGROUND OF THE INVENTION

The lighting principles of Carbon Nano Tube Field Emission Display(hereafter CNT-FED) and CRT are the same: electron beam hitting thefluorescent particles. Thus, the CNT-FED is featured for high quality,high brightness, high reaction and durable and has the advantages oflight and thin and low power consumption as the same as CRT.

With referring to drawings FIG. 1, a standard triode CNT-FED is shown. Adielectric layer 13 and a cathode layer 12 are on a substrate 11consecutively. A plurality of dielectric openings 131, the material ofloading CNT to be the emitting source 15, is formed on the dielectriclayer 13, the bottoms of which reach the surface of cathode layer 12.Besides, an anode layer is on an upper substrate 21 and some fluorescentparticles 23 are one the cathode layer 22. A separator (not shown) isarranged between the upper and lower substrates to locate the distancethereof. Circuits are arranged to the cathode layer 13, gate electrode14 and anode layer 22 to outside power supply (not shown). Then, aCNT-FED is formed by vacuum and package. The method of operations of theCNT-FED is that on the cathode layer 12, the emitting source 15 emitselectrons induced by the high voltage provided by anode layer 22. Whenthe fluorescent particles 23 on the surface of anode layer 22 is hit bythe electron beam to display, the require voltage for inducing electronsfrom the emitting source 15 is lowed by the gate electrode 14 in orderto control the switch of the FED by the low voltage.

With referring to drawing FIG. 2, a top view of the structure of thelower substrate (i.e. cathode layer and gate included only) of triodeCNT-FED with matrix arrangement is shown. Obviously, the cathode layer12 and the gate electrode 14 are arranged by crisscross and layered. Itneeds twice to connect the cathode layer 12 and the gate electrode 14 tothe outside power supply and too hard to control the process because ofthe different lengths of circuits. Thus, the cost of manufacturing isincreased substantially.

Furthermore, there are two conventional processes of manufacturingtriode CNT-FED. One is conventional thin film process of manufacturingsemiconductor, the disadvantages of which are the complex processes,high cost and the lithography is not applicable when in the age ofnano-line width. The other one is thick film screen print that featuresin the low cost but the process is unstable to be controlled and theresolution is restricted to the thickness of the dielectric layer of thethick film to be inapplicable.

Technology of Nano-Imprint Lithography (hereafter NIL) has been used inthe field of semiconductor since the paper written by Prof. Stephen Chouin 1996 of which the principle is similar to sigillography. Referring todrawings FIG. 3A through FIG. 3C, the standard NIL applied to the fieldof semiconductor is shown. First, the printed patterns are made on amold 31 by lithography and etching methods (such as mask, electron beametching, focused ion beam etching) to form patterns on the surface ofthe mold 31 and plastic material 32, such as Polymenthyl methacrylate(PMMA), is coated on the substrate 33. Then, the printed patterns arestamped on the surface of the plastic material 32 during appropriabletemperature and pressure to transfer the patterns from the mold 31 tothe plastic material 32. The advantages of replacing the conventionallithography process by NIL are: the manufacturing of mold can be made bye-beam to be the degree of nano-resolution and also, the process ofmoldboard stamping can be improved; besides, the mold can be reused andhave longer period than the conventional mask to reduce the cost ofmanufacturing.

The present inventions feature a structure of coplanar gate-cathode oftriode CNT-FED by NIL to produce a reliable, easy and simple to use, andlow cost triode CNT-FED.

SUMMARY

It is therefore an object of this present invention to provide astructure of coplanar gate-cathode of triode CNT-FED and themanufacturing method thereof to simply the process of manufacturing theoutside power supply circuits of gate and cathode layer.

Another object of the invention is to provide a structure of coplanargate-cathode of triode CNT-FED and the manufacturing method thereof ofwhich the cathode layer and gate electrode are made by ImprintLithography and ink jet to improve the resolution, simply the processand low the cost of the CNT-FED.

To achieve the goal, this present inventions provide a structure ofcoplanar gate-cathode of triode CNT-FED including: a substrate, aplurality of cathode layers, a plurality of gate extended layers, aplastic dielectric layer, a plurality of dielectric openings, and aplurality of gate electrodes. The plurality of cathode layers and theplurality of gate extended layers are coplanar and the plurality ofdielectric openings is formed from a plurality of trenches formed on thesurface of the plastic dielectric layer.

To achieve the goal of this invention, the process of manufacturing thestructure of coplanar gate-cathode of triode CNT-FED includes:

-   -   a. providing a substrate,    -   b. forming a plurality of cathode layers and gate extended        layers on the substrate by imprint,    -   c. forming a plastic layer on the plurality of cathode layers        and gate extended layers,    -   d. forming a plurality of dielectric openings and a plurality of        gate conducting wire conduits, wherein the dielectric openings        conduct to the surface of the cathode layers and the conduits        conduct to the surface of the gate extended layers,    -   e. filling the materials of CNT in the bottom of the dielectric        opening, and    -   f. forming a plurality of gate electrodes on predetermined        region of the plastic dielectric layer and the filling the same        material as the gate electrodes in the gate conducting wire        conduits so the gate electrodes can connect the gate extended        layers by the gate conducting wire conduits.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and the advantages and features of thepresent inventions will be more apparent from the detailed descriptionof preferred embodiments, taken in conjunction with the drawings.

FIG. 1 is illustrative view of the structure of standard triode CNT-FED.

FIG. 2 is the top view of the structure of the lower substrate of triodeCNT-FED with matrix arrangement.

FIG. 3A to FIG. 3C are illustrative views of the manufacturing processof imprint mold of the best embodiment of the present invention in use.

FIG. 4A is a cross-sectional drawing of the structure of coplanargate-cathode of triode CNT-FED of the present invention in use.

FIG. 4B is a cross-sectional drawing of the 90 degrees rotationstructure of coplanar gate-cathode of triode CNT-FED of the presentinvention in use.

FIG. 4C is a cross-sectional drawing of the structure of coplanargate-cathode of triode CNT-FED of another embodiment of the presentinvention in use.

FIG. 5A to FIG. 5E are illustrative views of the structure of coplanargate-cathode of triode CNT-FED of the best embodiment of the presentinvention in use.

FIG. 5F and FIG. 5G are an illustrative views of the structure ofcoplanar gate-cathode of triode CNT-FED of another embodiment of thepresent invention in use.

FIG. 6A to 6E are illustrative views of the process of manufacturingcathode layers and gate extended layers by imprint of a preferredembodiment of the present invention in use.

FIG. 7A to D are illustrative views of the process of manufacturingcathode layers and gate extended layers by imprint of another embodimentof the present invention in use.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The nature, feature and function of the present inventions will be moreapparent from the following description of preferred embodiments.

Referring to FIG. 4A, a cross-sectional drawing of the structure ofcoplanar gate-cathode of triode CNT-FED of the best mode of the presentinvention is shown and FIG. 4B is the same structure as FIG. 3A after 90degrees rotation. The structure of the present invention includes asubstrate 41, a plurality of cathode layers 421, a plurality of gateextended layers 422, a plastic dielectric layer 43, a plurality ofdielectric openings 431, and a plurality of gate electrodes 44.

The coplanar cathode layers 421 and gate extended layers 422 are locatedon the substrate 41 and the plastic dielectric layer 43 is formed on thecathode layers 421 and gate extended layers 422 the materials of whichare plastic. Colloid mixed with silver particles is preferred. Theplastic dielectric layer 43 can be made of a plastic material too, suchas Polymenthyl methacrylate (PMMA). The openings 431 are formed from aplurality of trenches forming downward on the surface of the plasticdielectric layer 43, and the bottoms of openings 431 reached the surfaceof cathode layer 421 to fill the materials of CNT. Then, a plurality ofgate electrodes 44 is formed on the plastic dielectric layer 43 andextended to penetrate the inner part of plastic dielectric layer 43 toconnect the gate extended layers 422 separately. The gate electrode 44is made of the same material as gate extended layer 422, such as colloidcomposed of silver particles. Thus, the uppermost gate electrodes 44 arecoplanar with the cathode layers 421 by the connecting of the innercircuit of gate electrodes 44.

The preferred embodiment is shown in FIG. 4C. A plurality of trenches431 is formed on the predetermined position of the surface of plasticdielectric layer 43 to place the gate electrodes 44 in to prevent theshort caused by gate electrodes' fall to the cathode layer 42.

Referring to FIG. 5A through FIG. 5E, the illustrative views of methodof manufacturing the coplanar gate-cathode of triode CNT-FED of the bestembodiment of the present invention are shown. The manufacturing methodincludes:

-   -   a. providing a substrate 51,    -   b. forming a plurality of cathode layers 521 and gate extended        layers 522 on the substrate 51 by imprint, wherein the cathode        layers 521 and gate extended layers 522 are made of plastic        materials, such as colloid composed of silver particles,    -   c. forming a plastic dielectric layer 53 on the cathode layers        521 and gate extended layers 522, wherein the plastic dielectric        layer 53 is made of plastic material, such as Polymenthyl        methacrylate (PMMA),    -   d. forming a plurality of dielectric openings 531 and a        plurality of gate conducting wire conduits 532, wherein the        dielectric openings 531 conduct to the surface of the cathode        layers 521 and the conduits 532 conduct to the surface of the        gate extended layers 522,    -   e. filling the materials of CNT in the bottom of the dielectric        opening 531,    -   f. forming a plurality of gate electrodes 55 on predetermined        region of the plastic dielectric layer 53 and the filling the        same material as the gate electrodes 55 in the gate conducting        wire conduits 532 by method from the group consisting of ink        jet, imprint and screen print. The filling material can be the        same material as gate extended layers 522. Thus, the gate        electrodes 55 can connect the gate extended layers 522 by the        gate conducting wires conduits 532 to form the structure of        coplanar gate-cathode of triode CNT-FED.

In another embodiment of this invention shown in FIG. 5A to FIG. 5G, atthe same time of forming a plurality of dielectric openings 531 and aplurality of gate conducting wire conduits 532 in step (d), a pluralityof trenches 533 is formed on the predetermined region of the dielectriclayer 53 to place the gate electrodes 55 in.

In the step of forming cathode layers 521 and gate extended layers 522by imprint shown in FIG. 6A to FIG. 6E in step (b), a moldboard is firstprovided on which some patterns are determined. A plastic conductivematerial 62, preferably collide composed with silver particles, iscoated on the surface of moldboard 61. A stencil member 63 is reached tothe plastic conductive material 62 and then the plastic conductivematerial 62 is attached to the surface of the plastic conductivematerial 62 to form some plastic conductive plates 621 corresponding tothe predetermined patterns. The plastic conductive plates 621 areprinted to the substrate 61 to form the structure of coplanargate-cathode of triode CNT-FED of the present invention.

In another embodiment of this invention shown in FIG. 7A to FIG. 7D, thestencil member using in the method of in step (b) can be a roller type.A moldboard 61 is provided on which some patterns are determined. Aplastic conductive material 62 is coated on the surface of moldboard 61and then is attached on the surface of moldboard 61 by the stencilmember 63′ of roller type. Thus, the predetermined patterns on thesurface of stencil member 63′ are stamped to the substrate 61 to formthe structure of coplanar gate-cathode of triode CNT-FED of the presentinvention.

It is therefore understood that although the present invention has beenspecifically disclosed with the preferred embodiment and examples,modifications to the design concerning sizing and shape will be apparentto those skilled in the art and such modifications and variations areconsidered to be equivalent to and within the scope of the disclosedinvention and the appended claims.

1. A structure of coplanar gate-cathode of triode CNT-FED including: asubstrate, a plurality of cathode layers formed on said substrate, aplurality of gate extended layers formed on said substrate, wherein saidcathode layers and said gate extended layers are coplanar, a plasticdielectric layer formed on said cathode layers and said gate extendedlayers, a plurality of dielectric openings, wherein said openings isformed from a plurality of trenches formed downward on the surface ofsaid plastic dielectric layer, and the bottoms of dielectric openingsreach the surface of cathode layer to fill the materials of CNT, and aplurality of gate electrodes formed on said plastic dielectric layer andextended to penetrate the inner part of said plastic dielectric layer toconnect said gate extended layers separately.
 2. The structure of claim1, wherein predetermined positions on the surface of said plasticdielectric layer further comprises a plurality of trenches to place saidgate electrodes in to prevent the short caused by said gate electrodes'fall to said cathode layer.
 3. The structure of claim 1, wherein saidcathode layer is made of collide composed with silver particles.
 4. Thestructure of claim 1, wherein said gate extended layer is made ofcollide composed with silver particles.
 5. The structure of claim 1,wherein said dielectric layer is made of Polymenthyl methacrylate(PMMA).
 6. The structure of claim 1, wherein said gate electrode is madeof collide composed with silver particles.
 7. A process of manufacturingcoplanar gate-cathode of triode CNT-FED includes: a. providing asubstrate, b. forming a plurality of cathode layers and gate extendedlayers on the substrate by imprint, c. forming a plastic layer on saidcathode layers and gate extended layers, d. forming a plurality ofdielectric openings and a plurality of gate conducting wire conduits,wherein said dielectric openings conduct to the surface of said cathodelayers and said conduits conduct to the surface of said gate extendedlayers, e. filling materials of CNT in the bottom of said dielectricopening, and f. forming a plurality of gate electrodes on predeterminedregion of said plastic dielectric layer and the filling the samematerial as said gate electrodes in said gate conducting wire conduitsso that said gate electrodes connect said gate extended layers by saidgate conducting wire conduits.
 8. The process of claim 7, wherein saidstep b further comprises: b1. providing a moldboard on which somepatterns are determined, b2. coating a plastic conductive material onthe surface of said moldboard, b3. providing a stencil member with astenciling surface, b4. reaching the surface of said stencil member tosaid plastic conductive material and then said plastic conductivematerial is attached to the surface of said plastic conductive materialto form a plurality of plastic conductive plates corresponding to saidpatterns, and b5. printing said plastic conductive plates onto thesubstrate by said stencil member to form said cathode layers and gateextended layers
 9. The process of claim 8, wherein said plastic materialis made of collide composed with silver particles.
 10. The process ofclaim 8, wherein said stencil member is from the group consisting ofplate type and roller type.
 11. The process of claim 8, wherein saidplastic material is made of Polymenthyl methacrylate (PMMA).
 11. Theprocess of claim 8, wherein at the same time of forming said dielectricopenings and said gate conducting wire conduits in step (d), a pluralityof trenches is formed on the predetermined region of said dielectriclayer to place said gate electrodes in.
 13. The process of claim 8,wherein the method of forming said gate electrode is chosen from thegroup consisting of ink jet, imprint and screen print.
 14. The processof claim 7, wherein said gate electrode is plastic material is made ofcollide composed with silver particles.